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Recommended Products
12-inch Vertical High-Temperature Oxidation Annealing Furnace
Meeting the specifications for 12-inch wafers, this process is used to form a clean, dense SiO2 film layer on silicon substrates; it is applied in devices such as CMOS, IGBT, and MEMS, often serving as an isolation layer, buffer layer, masking layer, or sacrificial layer.
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VCSEL wet oxidation furnace
A wet oxidation process was developed specifically for VCSEL devices to create a dense optical confinement layer and an electrical insulation structure; simultaneously compatible with general wafer surface passivation treatment to meet the dual process requirements of optoelectronic and semiconductor devices.
High-temperature oxidation furnace
Used to form a clean and dense SiO2 film layer on a silicon substrate; It is applied to devices such as CMOS, IGBT, and MEMS, and is often used as an isolation layer, buffer layer, masking layer, sacrificial layer, etc.
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