Products and Solutions

Provide a full process equipment solution from device research and development to mass production

Industrial version

Research version

Low-temperature oxidation/annealing furnace

Precise heat treatment carried out under inert gas protection eliminates lattice defects at the wafer interface, optimizes the electrical properties of materials, and significantly enhances device reliability and mass production yield.

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VCSEL wet oxidation furnace

A wet oxidation process was developed specifically for VCSEL devices to create a dense optical confinement layer and an electrical insulation structure; simultaneously compatible with general wafer surface passivation treatment to meet the dual process requirements of optoelectronic and semiconductor devices.

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High-temperature oxidation furnace

Used to form a clean and dense SiO2 film layer on a silicon substrate;
It is applied to devices such as CMOS, IGBT, and MEMS, and is often used as an isolation layer, buffer layer, masking layer, sacrificial layer, etc.

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Vertical LPCVD

Low-pressure chemical vapor deposition technology is adopted to grow functional films such as silicon nitride and doped polycrystalline silicon on the substrate surface, which is often applied in product fields such as semiconductors, optoelectronics, MEMS, and solar cells.

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SiC high-temperature activation furnace

Customized for silicon carbide power devices, this process repairs ion implantation lattice damage and activates dopant impurities through ultra-high-temperature annealing, optimizing the electrical performance of automotive-grade devices.

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Proton exchange furnace

Based on a dual-temperature zone collaborative mechanism, proton exchange reaction is achieved in optical materials such as lithium niobate to form a low-loss integrated optical waveguide structure, supporting the manufacturing of high-speed photonic devices

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