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Provide a full process equipment solution from device research and development to mass production
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12-inch Vertical High-Temperature Oxidation Annealing Furnace
Meeting the specifications for 12-inch wafers, this process is used to form a clean, dense SiO2 film layer on silicon substrates; it is applied in devices such as CMOS, IGBT, and MEMS, often serving as an isolation layer, buffer layer, masking layer, or sacrificial layer.
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VCSEL wet oxidation furnace
A wet oxidation process was developed specifically for VCSEL devices to create a dense optical confinement layer and an electrical insulation structure; simultaneously compatible with general wafer surface passivation treatment to meet the dual process requirements of optoelectronic and semiconductor devices.
High-temperature oxidation furnace
Used to form a clean and dense SiO2 film layer on a silicon substrate; It is applied to devices such as CMOS, IGBT, and MEMS, and is often used as an isolation layer, buffer layer, masking layer, sacrificial layer, etc.
Vertical LPCVD
Low-pressure chemical vapor deposition technology is adopted to grow functional films such as silicon nitride and doped polycrystalline silicon on the substrate surface, which is often applied in product fields such as semiconductors, optoelectronics, MEMS, and solar cells.
SiC high-temperature activation furnace
Customized for silicon carbide power devices, this process repairs ion implantation lattice damage and activates dopant impurities through ultra-high-temperature annealing, optimizing the electrical performance of automotive-grade devices.
Proton exchange furnace
Based on a dual-temperature zone collaborative mechanism, proton exchange reaction is achieved in optical materials such as lithium niobate to form a low-loss integrated optical waveguide structure, supporting the manufacturing of high-speed photonic devices