High-temperature oxidation furnace
Product Overview
A high-quality silica film layer is generated on the wafer surface through high-temperature oxidation reactions, serving as an isolation medium for devices, an ion implantation masking layer, and a surface passivation protective structure.
Product features
High-cleanliness chamber environment: Professional materials and design are adopted to ensure the purity of the oxide film preparation process.
High-capacity continuous operation capability: Supports batch wafer processing and is suitable for large-scale production in fields such as integrated circuits.
High-stability process output: The equipment operates reliably, ensuring uniform and consistent performance of the oxide film.
Technical indicators
Wafer size: 8 inches (compatible with 6 inches)
Temperature range: 800°C-1200°C
Length of the constant temperature zone: 860mm
Loading capacity: 150 pieces per batch
Temperature uniformity: ±0.5°C
Application scenarios
Applicable materials: Wafers of 8 inches and below.
Applicable process: High-temperature oxidation process (800℃-1200℃), used for preparing oxide films (such as ion-implanted barrier layers, insulating gate materials).
Application fields: Integrated circuit manufacturing, device protective layer preparation.
Product Category
Industrial version
Keyword
EXWELL
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Address: No. 858, Purui West Road, Wangcheng Economic and Technological Development Zone, Changsha City
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