12-inch Vertical High-Temperature Oxidation Annealing Furnace
Product Overview
Meeting the specifications for 12-inch wafers, this product is designed to form a clean, dense SiO2 film layer on silicon substrates; it is widely used in devices such as CMOS, IGBT, and MEMS, often serving as an isolation layer, buffer layer, masking layer, or sacrificial layer.
Product Features
Highly Clean Chamber Environment: Employing professional materials and design to ensure the purity of the anodizing process.
High-capacity continuous operation capability: Supports batch wafer processing, enabling scalable production in fields such as integrated circuits.
Highly Stable Process Output: The equipment operates reliably, ensuring uniform and consistent oxide film performance.
Technical Indicators
1. Silicon wafer size: 12-inch;
2. Sample Volume: ≥125 tablets/boat;
3. Constant Temperature Zone Length: ≥850mm;
4. Temperature Uniformity: ±0.5℃;
5. Film Thickness Uniformity (WIW/WTW/RTR): ≤2%
Application Scenarios
Applicable materials: Wafers 12 inches and smaller.
Applicable Processes: High-temperature oxidation process (900℃–1100℃) is used to prepare oxide films (such as ion implantation barrier layers and insulating gate materials).
Applicable Fields: Integrated circuit manufacturing, device protective layer preparation.
Product Category
Industrial version
Keyword
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