
Dry etching ion beam etching (IBE)
Product Overview
Utilizing ion beam physical etching technology, suitable for high-precision processing of difficult-to-etch materials, especially exhibiting unique advantages in the processing of hard and brittle materials such as metals and ceramics.
Product Features
Dual-mode workpiece stage: Single-piece (angle adjustable from -90° to 90°) and multi-piece (circumferential rotation), adapting to both research and mass production needs.
Water-cooled low-temperature etching: Prevents wafer thermal damage, suitable for damage-free processing of sensitive materials such as quantum chips.
Technical Specifications
Workpiece StageSingle-piece: 6 inches and below Multi-piece: 2" square x18 4" round x4 |
Ion SourceKaufman Ion source (optional RF ion source) Ion beam energy: 0eV~1000eV Continuously adjustable Beam current: Maximum 200mA (circular) |
Uniformity+5% (MAX-MIN)2*AVG |
Substrate stage coolingWater cooling/Helium back cooling |
Application Scenarios
Applicable materials: Metals, ceramics, compound semiconductors, quartz, etc.;
Core processes: Hard and brittle material etching, nanostructure processing, ion milling;
Application fields: Optoelectronic devices, quantum chips, micro-nano optical components.
Product Category
Research version
Keyword
EXWELL
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