Dry etching ion beam etching (IBE)
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  • Dry etching ion beam etching (IBE)

Dry etching ion beam etching (IBE)



Product Overview

Utilizing ion beam physical etching technology, suitable for high-precision processing of difficult-to-etch materials, especially exhibiting unique advantages in the processing of hard and brittle materials such as metals and ceramics.

 

Product Features

Dual-mode workpiece stage: Single-piece (angle adjustable from -90° to 90°) and multi-piece (circumferential rotation), adapting to both research and mass production needs.

Water-cooled low-temperature etching: Prevents wafer thermal damage, suitable for damage-free processing of sensitive materials such as quantum chips.

 

Technical Specifications

Workpiece Stage

Single-piece: 6 inches and below

Multi-piece: 2" square x18

4" round x4

Ion Source

Kaufman Ion source (optional RF ion source)

Ion beam energy: 0eV~1000eV Continuously adjustable

Beam current: Maximum 200mA (circular)

Uniformity

+5%

(MAX-MIN)2*AVG

Substrate stage cooling

Water cooling/Helium back cooling

 

Application Scenarios

Applicable materials: Metals, ceramics, compound semiconductors, quartz, etc.;

Core processes: Hard and brittle material etching, nanostructure processing, ion milling;

Application fields: Optoelectronic devices, quantum chips, micro-nano optical components.

Product Category

Research version

Keyword

EXWELL

Dry etching ion beam etching (IBE)
+
  • Dry etching ion beam etching (IBE)