Dry etching, Reactive Ion Etching (RIE)
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  • Dry etching, Reactive Ion Etching (RIE)

Dry etching, Reactive Ion Etching (RIE)



Product Overview

Dry etching equipment based on radio frequency discharge principle, achieving material removal through a combination of physical bombardment and chemical reaction, suitable for etching various semiconductor materials.

 

Product Features

Digital Intelligent Control: Fully digital automatic control of the process, easy to operate and learn.

Constant Pressure Automatic Control: Automatic adjustment of constant reaction pressure to ensure process repeatability and stability.

Configurable load lock loading chamber: Reduces air pollution and improves loading efficiency and chamber vacuum retention.

 

Technical Specifications

Wafer Size

8 inches and below

Etch Rate

0.1-4um/min

(depending on the specific material and process)

Uniformity

+5%

(MAX-MIN)2*AVG

Substrate Stage Cooling

Water Cooling

 

Application Scenarios

Applicable Materials: Silicon, silicon dioxide, silicon nitride, etc.;

Core Processes: Transistor gate etching, MEMS structural processing, contact hole etching;

Application Fields: Integrated circuit manufacturing, microelectromechanical systems, optoelectronic devices.

Product Category

Research version

Keyword

EXWELL

Dry etching, Reactive Ion Etching (RIE)
+
  • Dry etching, Reactive Ion Etching (RIE)