Vertical LPCVD
Product Overview
Utilizing low-pressure chemical vapor deposition (LPCVD) technology, it grows functional thin films such as silicon nitride and doped polysilicon on the substrate surface, providing passivation and dielectric isolation solutions for devices.
Product Features
Optimized Thin Film Uniformity Design: Through process parameter control, uniform deposition of silicon nitride, silicon dioxide, and other thin films is achieved.
High-Cleanliness Process Environment Construction: The chamber design meets the high-purity requirements of semiconductor thin film deposition.
Automated Production Integration: The equipment is adapted to intelligent production lines to improve the efficiency and consistency of thin film preparation.
Technical Specifications
Wafer Size: 8-inch (compatible with 6-inch)
Temperature Range: 500°C-800°C
Constant Temperature Zone Length: 860mm
Loading Capacity: 150 wafers/batch
Temperature Uniformity: ±1°C
Application Scenarios
Applicable Materials: 8-inch and smaller wafers.
Applicable Processes: Low-pressure chemical vapor deposition (LPCVD), used for depositing silicon nitride, silicon dioxide, polysilicon, and other thin films.
Applicable Fields: Semiconductor device thin film preparation, integrated circuit processes.
Product Category
Industrial version
Keyword
EXWELL
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+86 0731-88376310
Address: No. 858, Purui West Road, Wangcheng Economic and Technological Development Zone, Changsha City
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