SiC high-temperature activation furnace
Product Overview
Customized for silicon carbide power devices, this system repairs ion implantation lattice damage and activates dopant impurities through ultra-high-temperature annealing, optimizing the electrical performance of automotive-grade devices.
Product Features
Innovative Metal-Free Hot Field Design: Utilizes special materials to construct the hot field, adapting to the high-temperature process requirements of SiC.
Long-Life Heating System: Key components of the equipment are resistant to extreme temperatures, ensuring the continuity of the high-temperature annealing process.
Special Treatment of Hot Field Materials: Optimizes hot field performance to meet the high-precision processes such as SiC ion implantation activation.
Technical Specifications
Wafer Size: 6 inches (compatible with 4 inches)
Temperature Range: 1000°C-1900°C
Constant Temperature Zone Length: 250mm
Loading Quantity: 50 pieces/batch
Temperature Control Accuracy: ≤±1°C
Application Scenarios
Applicable Materials: 6-inch and smaller SiC wafers.
Applicable Processes: High-temperature activation annealing (1000℃-1900℃), trench smoothing process.
Applicable Fields: Third-generation semiconductor (SiC) device manufacturing.
Product Category
Industrial version
Keyword
EXWELL
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+86 0731-88376310
Address: No. 858, Purui West Road, Wangcheng Economic and Technological Development Zone, Changsha City
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