Horizontal oxidation diffusion annealing furnace
Product Overview
Integrates oxidation, diffusion, and annealing processes. Supports doping control, interface optimization, and structure formation of silicon-based and wide-bandgap semiconductor materials, serving the core processes of wafer mass production.
Product Features
Flexible Configuration of Multiple Processes: Supports switching between multiple processes such as oxidation, diffusion, and annealing to adapt to diverse needs.
Mature and Stable Equipment Architecture: Market-proven design ensures reliable long-term operation.
High-Reliability Process Output: Meets the needs of semiconductor material electrical characteristic control and device structure preparation.
Technical Specifications
Wafer Size: 8 inches and below
Temperature Range: 400°C-1200°C (depending on specific process selection)
Number of Process Tubes: 1-4 tubes/unit
Constant Temperature Zone Length: 300-1000mm customizable
Applicable Materials: Silicon, silicon carbide, etc.
Application Scenarios
Applicable Materials: Silicon, silicon carbide, and other semiconductor materials.
Applicable Processes: High-temperature oxidation (forming oxide films), thermal diffusion (impurity doping), annealing (eliminating lattice defects).
Applicable Fields: Integrated circuit device structure preparation, semiconductor material electrical characteristic control.
Product Category
Industrial version
Keyword
EXWELL
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Address: No. 858, Purui West Road, Wangcheng Economic and Technological Development Zone, Changsha City
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