Horizontal Oxidation Diffusion Annealing Furnace
Product Overview
Integrates oxidation, diffusion, and annealing into a multifunctional process, supporting dopant control, interface optimization, and structural formation for silicon-based and wide-bandgap semiconductor materials, thereby serving the core manufacturing processes of wafer mass production.
Product Features
Flexible configuration through multi-process combination: Supports switching among multiple processes such as oxidation, diffusion, and annealing to meet diverse application requirements.
Mature and stable equipment architecture: A market-proven design that ensures long-term, reliable operation.
High-reliability process output: Meet the requirements for tuning the electrical properties of semiconductor materials and fabricating device structures.
Technical Indicators
Wafer size: 8 inches and below
Temperature range: 400°C–1200°C (depending on the specific process)
Number of process pipes: 1–4 tubes per unit
Constant-temperature zone length: Customizable from 300 to 1000 mm
Applicable materials: Silicon, silicon carbide, etc.
Temperature control accuracy: ≤±0.5℃ (above 800℃), ≤±1℃ (below 800℃).
Single-point temperature stability: ≤±1℃/24h (800℃)
Maximum Heating Rate : ≥15℃/min;
Production: 25–150 tablets per tube (excluding accompanying tablets)
Total equipment height: <3m (4 tubes)
DCE Constant-Temperature Gas Supply System: The furnace tubes are equipped with a DCE self-cleaning function, enabling cleaning before and after the process to minimize the impact of particulates and metallic impurities. The DCE system features overpressure protection for the inlet gas supply, overpressure protection for the source cylinders, and a source temperature controller that maintains a constant temperature in the DCE source cylinders.
Source Temperature Controller: Temperature range: 10°C~40°C
Temperature accuracy: ±0.5°C
Oxidation Process Metrics ： Intra-wafer thickness uniformity ≤ 3%, inter-wafer uniformity ≤ 3%, and batch-to-batch uniformity ≤ 3%.
Application Scenarios
Applicable materials: Semiconductor materials such as silicon and silicon carbide.
Applicable process: High-temperature oxidation (formation of an oxide film), thermal diffusion (impurity incorporation), and annealing (elimination of lattice defects).
Applicable fields: Fabrication of integrated circuit device structures and control of the electrical properties of semiconductor materials.
Product Category
Industrial version
Keyword
EXWELL
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