Horizontal LPCVD
Product Overview
Through low-pressure chemical vapor deposition technology, silicon nitride, doped polysilicon, and other solid films are reacted on the substrate surface to meet the high-volume deposition needs of device dielectric packaging and passivation layers.
Product Features
High-precision temperature control: Using a professional temperature control system to achieve precise temperature control in a low-pressure deposition environment, ensuring the stability of the film deposition process.
Scalable production capacity design: Supports parallel operation of multiple processes, meeting the production needs of large-batch wafer film deposition, and significantly improving production efficiency.
Film uniformity optimization process: Through the collaborative design of the gas flow field and temperature field, ensuring that the film uniformity meets the high-precision requirements of semiconductors.
Technical Indicators
Wafer size: 8 inches and below
Temperature range: 500°C-800°C
Number of process tubes: 1-4 tubes/unit
Constant temperature zone length: 300-1000mm customizable
Ultimate vacuum: <3Pa
Application Scenarios
Applicable materials: 8-inch and below wafers, compound semiconductors.
Applicable processes : Low-pressure chemical vapor deposition (LPCVD), used for depositing silicon nitride, silicon dioxide, and other films.
Applicable fields: Semiconductor film preparation, integrated circuit processes.
Product Category
Industrial version
Keyword
EXWELL
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