EXWELL
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A wet oxidation process was developed specifically for VCSEL devices to create a dense optical confinement layer and an electrical insulation structure; simultaneously compatible with general wafer surface passivation treatment to meet the dual process requirements of optoelectronic and semiconductor devices.
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High-temperature oxidation furnace
<p>Used to form a clean and dense SiO2 film layer on a silicon substrate;<br /> It is applied to devices such as CMOS, IGBT, and MEMS, and is often used as an isolation layer, buffer layer, masking layer, sacrificial layer, etc.</p>
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Low-pressure chemical vapor deposition technology is adopted to grow functional films such as silicon nitride and doped polycrystalline silicon on the substrate surface, which is often applied in product fields such as semiconductors, optoelectronics, MEMS, and solar cells.
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SiC high-temperature activation furnace
Customized for silicon carbide power devices, this process repairs ion implantation lattice damage and activates dopant impurities through ultra-high-temperature annealing, optimizing the electrical performance of automotive-grade devices.
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